Fengchun Jiang

Professor

Address: Zhengzhou University of Light Industry, School of Physics   and Electronic Engineering

Phone:   13838017717

FAX:

E-mail:   fengchunj@zzuli.edu.cn；fengchunj001@163.com

Websites:

Research   Field and Research Interest: Semiconduct Quantum Structures

Educational   Background：

3/2002-12/2005： M.S. in Theory of Physics. Physics Department,   Henan Normal University, Xinxian, Henan, China.

9/2000-6/2001：Visiting Scholarin Theory and New Technology of Electrical Engineering. Theory of   Electrical Engineering, Xi’an Jiaotong University, Xi’an, China.

9/1987--6/1988：Teaching Assistant in Theory of Physics. Physics   Department, Beijing Normal University, Beijing, China.

9/1981--6/1985：B.S. in Physcs. Physics Department, Henan   University, KaiFen, Henan, China

Teaching   courses：College   Physics；Physical Experiment   

Main   Publications：She has over twentypapers, eleven of which were collected by   SCI

1.   F. C. Jiang,CongxinXia,Y. M. Liu，S. Y. Wei, “Built-in electric field effect on the hydrogenicdonor impurity in wurtziteInGaN quantum dot”，

Physica E, 40(2008)2714，（SCI）

2. Fengchun Jiang, Congxin Xia, Shuyi Wei, “Hydrogenic impurity states   in zinc-blende InGaN quantum dot.” Physica B403(2008) 165（SCI）

3.   Fengchun Jiang，CongxinXia,Shuyi Wei，“Exciton   states in wurtzite and zinc-blende InGaN/GaN coupled quantum dots.”Microelectronics   Journal39(2008)74（SCI）

Research   Projects：

Awards   & Honor：

“The optical properties of low-dimesional nitride semiconductors”Henan province education department，Scientific and technological achievements won first   prize

Affiliations：member of Physics teaching committe of south central China

AcademicActivities：