Maocai Wei

Lecturer, Doctor ofScience

ADDRESS：Zhengzhou University of Light Industry, School of Physics and Electronic Engineering

PHONE：13264711506

FAX：

E-mail：2017098@zzuli.edu.cn; maocai0306@163.com

Websites：

ResearchInterests:Multiferroic materials and devices, optoelectronic functional materials and devices

Education Background：

9/2011--7/2016: Ph.D. inCondensed Matter Physics.School of Physics and Technology, Wuhan University, Wuhan, Hubei, China.

9/2007--7/2011: B.S. in Physcs. School of Physics and Technology, University of Jinan,Jinan, Shandong, China.

Teaching Courses：Physical Experiment

MainPublications:

1. Maocai Wei*, Meifeng Liu, Lun Yang, Xiang Li, Yunlong Xie, Xiuzhang Wang*, Zijiong Li, Yuling Su, Zhongqiang Hu, and Jun-Ming Liu, Electro-opto-mechano driven reversible multi-state memories based on photocurrent in Bi_0.9Eu_0.1FeO₃/La_0.67Sr_0.33MnO₃/PMN–PT heterostructures, RSC Advances 10, 15784-15793 (2020).

2. Maocai Wei, Meifeng Liu, Lun Yang, Bo Xie, Xiang Li, Xiuzhang Wang*, Xiangyang Cheng, Yongdan Zhu, Zijiong Li, Yuling Su, Meiya Li*, Zhongqiang Hu, and Jun-Ming Liu, Electro and photon double-driven non-volatile and non-destructive readout memory in Pt/Bi_0.9Eu_0.1FeO₃ /Nb:SrTiO₃ heterostructures, Ceramics International 46, 5126-5131 (2020).

3. Maocai Wei, Meifeng Liu, Xiuzhang Wang, Meiya Li*, Yongdan Zhu, Meng Zhao, Feng Zhang, Shuai Xie, Zhongqiang Hu, and Jun-Ming Liu, Impulse voltage control of continuously tunable bipolar resistive switching in Pt/ Bi_0.9Eu_0.1FeO₃/ Nb-doped SrTiO₃ heterostructures, Applied Physics A: Materials Science & Processing, 123,198 (2017).

4. Maocai Wei, Meiya Li*, Yongdan Zhu, Meng Zhao, Qiangwen Wang, Feng Zhang, Yuan Zhang, Zhongqiang Hu, Renhui Jiang, Dongshan Zhao*, Effects of piezoelectric-poling-induced strain on the magnetic properties of FeBSiC/PMN-PT (001) multiferroic heterostructures, Journal of Alloys and Compounds, 676, 96 -100 (2016)

ResearchProjects：

1. Improving photovoltaic properties in double perovskite multiferroic Bi₂FeCrO₆ by bandgap tuning , National Natural   Science Fund of China (NO. 51702093).

2. Study on sensing-memory of broadband and ultra-low power phototransistor based on Bi₂O₂Se, the Science and Technology Research Project of Henan Province ( No. 212102210606).

Awards & Honor:

Affiliations:

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